The Cryofox Discovery 502 is a single chamber thin film deposition unit utilizing e-beam deposition. It is possible to fit the system with an ion source to do both pre cleaning prior to deposition, or do ion assisted deposition for increased adhesion and layers with special properties. The system can deposit up to eight 4" wafers in one batch, which makes it suitable for small scale production system.

• Single chamber system
• Up to eight 4" wafers per batch
• Maximum one e-beam source

The Cryofox Explorer 600 deposition system is a split chamber unit. Because of the two chambers, the process chamber is not vented between batches. Because of this it is easy to keep the process chamber and the source material free of contamination. It is possible to include both an e-beam source and up to two 3" magnetrons in the process chamber, which makes the Explorer 600 a very versatile research tool for various R&D projects.

• Split chamber system with load lock
• Single 4" or 6" wafer per batch
• Maximum one e-beam source

When no restriction on material compositions and layer stack combinations are desired, the Cryofox Explorer 700 is the perfect choice. In this system it is possible to do alloy layers from pure source materials using co-e-beam deposition. By using special laser cut masks, an almost perfect uniformity across a 6" wafer can be achieved. The unit can carry up to eight 4" wafers or four 6" wafers in one batch, which are easily changed without breaking the vacuum in the process chamber.

• Split chamber system with load lock
• Up to eight 4" wafers or four 6" wafer per batch
• Maximum two e-beam sources

The Cryofox Explorer 500 GLAD system is a split chamber unit specially designed for depositions utilizing the glancing angle deposition principle. In this way well defined arrays of structures, with sizes in the nanometer range can be deposited. The system is equipped with a small turbo pumped load lock for extremely short pump down times. The position of the wafer is precisely controlled during the entire deposition. The source to substrate distance can be controlled for each layer, which increases the degree of utilization for expensive materials.

• Split chamber system with load lock
• Single 4" wafer per batch
• Maximum one e-beam source